Photodetectors based on silicon carbide (SiC) perform well in the ultraviolet (UV) at wavelengths shorter than 260 nm and have low response in visible wavelengths, resulting in desired solar-blind or visible-blind performance. However, due to the high 3.26 eV indirect bandgap of SiC, absorption of near-UV light of wavelengths from 260 to 380 nm, and thus detection efficiency, is poor. Researchers at The University of Virginia (Charlottesville, VA) and the U.S. Army Research Laboratory (ARL; Adelphi, MD) have now created a SiC Schottky photodiodes with a thick i (intrinsic) region that has its absorption peak shifted to longer UV wavelengths, resulting in good performance in the 270–350 nm region.