Fujitsu and Fujitsu Laboratories have successfully developed the world's first technology for growing a diamond film with highly-efficient heat dissipation on the surface of GaN HEMTs.
The new design reduces the amount of heat generated by the devices during operation by 40 percent, leading to simplification of the cooling system and making it possible to miniaturise radar systems that rely on GaN HEMTs. This improvement to the design will make it significantly easier to install larger numbers of the devices for applications including improved weather forecasting and 5G communications, says Futijtsu.
Fujitsu aims to commercialise its new high-heat-dissipation GaN HEMT amplifiers in 2022 for use in weather radar systems and next-generation wireless communication systems. The details of the technology and related research were presented at the International Conference on Materials Science '2019 MRS FALL MEETING & EXHIBIT' in Boston, USA.